Metal-insulator-metal capacitors using Y 2 O 3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition J. Vac. Sci. Technol. A 22, 655 (2004); 10.1116/1.1722633 Composition, structural, and electrical properties of fluorinated silicon-nitride thin films grown by remote plasmaenhanced chemical-vapor deposition from SiF 4 / NH 3 mixtures J. Vac. Sci. Technol. A 22, 570 (2004); 10.1116/1.1699335 Dielectric properties of amorphous hydrogenated silicon carbide thin films grown by plasma-enhanced chemical vapor deposition Silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

A taper dry etching technique for molybdenum films is proposed. The dry etching characteristics of oxygen-doped Mo films in a CC14-O~ discharge are studied. It is found that oxygen-doped Mo films are etched at a higher rate than oxygenundoped Mo film and that, in oxygen-doped Mo films, undercutting occurs differently from oxygen-undoped Mo film. Making use of the Mo etching characteristics, tapered Mo patterns with little ]inewidth loss to resist patterns are obtained by plasma etching of the Mo double layer, namely an oxygen-doped Mo film over an oxygen-undoped Mo film. The taper angle is varied from 40 ~ to 60 ~ by varying the thickness ratio of the oxygen-doped Mo film to the total Mo double layer. This technique promises to improve an interconnection yield in LSI's through reduction of wiring disconnection or shorts over the tapered-Mo steps.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 137.99.31.134 ABSTRACT An investigation of the CrO3-H~O-HF system shows that preferential etching of crystal defects on silicon surfaces is very sensitive to the concentration ratio of CrO3 to HF. This leads to development of a new etch consisting of one part by volume of 1.5 molal (M) CrO~ (150 g/1 H~O) and one part of 49% HF. This etch can delineate a wide variety of crystal defects with sharp definition. The shape of dislocation etch pits is uniquely determined by the orientation of wafer surfaces and dislocation lines.

We investigate how long-range scalar interactions affect the properties of dark matter haloes. For doing so we employ the ReBEL model which implements an additional interaction between dark matter particles. On the phenomenological level this is equivalent to a modification of gravity. We analyse the differences between five ReBEL models and ΛCDM using a series of high resolution cosmological simulations. Emphasis is placed on investigating how halo properties change in the presence of a fifth force. We report that the density profile of ReBEL haloes is well described by the NFW profile but with mean concentrations from 5% to a few times higher than the standard ΛCDM value. We also find a slight increase of the halo spin for haloes more massive than 5 × 10 11 h −1 M , reflecting a higher rotational support of those haloes due to scalar forces. In addition, the dark matter haloes in our models are more spherical than their counterparts in ΛCDM. The ReBEL haloes are also more virialised, with a large difference from ΛCDM for strong fifth forces and a much smaller change for weak scalar interactions.

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Mobile ionic charge‐related instability in Mo‐gate MOS devices has been successfully prevented by high temperature forming gas annealing false(H2/N2=1/10false) above 900°C, combined with H2‐normaldoped Mo or H2‐normaldoped Ta‐Mo alloy gate electrodes. H2‐normaldoped films were deposited by RF sputtering in a mixed H2 and Ar ambient. It is concluded that sodium diffusion from Mo‐gate metal into the gate SiO2 is prevented by forming gas annealing above 900°C, and that its effect is enhanced by H2‐normaldoping in Mo films. It is also revealed that, when Ta‐Mo (7 atom percent Ta) alloy gate structures are used, high temperature forming gas annealing does not degrade other MOS characteristics and maintains good stability under short‐term bias‐temperature stress aging.