This papei describes a design and fabrication of one-chip receiver M M I C for L-band applications. The LNA; double balanced mixer, LO balun, RF balun, IF amplifier and's bias circuit are integrated a chip. Each balun operates active and composed of MESFETs. The new applied..bias circuit is able to compensate the variation of the threshold voltage caused by the: process variation;! temperature changes, and.etc.The mixer 'achieves the conversion losses of -14dB, IP3 of 4dBm, and port-to-port isoiation over 25dB. The designed chip is fabricated by the ETFU OSpm GaAs MESFET processes. The chip size is 1.4mm.l.4mm.