In this study, we synthesized four acceptor–donor–acceptor type hole-transporting materials (HTMs) of SY1–SY4 for an HTMs/interfacial layer with carbazole as the core moiety and ester/amide as the acceptor unit. These HTMs contain 4-hexyloxyphenyl substituents on the carbazole N atom, with extended π-conjugation achieved through phenylene and thiophene units at the 3,6-positions of the carbazole. When using amide-based HTMs SY2 as a dopant-free HTM in a p–i–n perovskite solar cell (PSC), we achieved a power conversion efficiency (PCE) of 13.59% under AM 1.5G conditions (100 mW cm–2); this PCE was comparable with that obtained when using PEDOT:PSS as the HTM (12.33%). Amide-based SY2 and SY4 HTMs showed a larger perovskite grain than SY1 and SY3 because of the passivation of traps/defects at the grain boundaries and stronger interaction with the perovskite layer. In further investigation, we demonstrated highly efficient and stable PSCs when using the dopant-free p–i–n device structure indium tin oxide/NiO x /interfacial layer (SY-HTMs)/perovskite/PC61BM/BCP/Ag. The interfacial layer improved the PCEs and large grain size (micrometer scale) of the perovskite layer because of defect passivation and interface modification; the amide group exhibited a Lewis base adduct property coordinated to Ni and Pb ions in NiO x and perovskite, bifacial defect passivation and reduced the grain boundaries to improve the crystallinity of the perovskite. The amide-based SY2 exhibited the stronger interaction with the perovskite layer than that of ester-based SY1, which is related to the observations in X-ray absorption near edge structure (XANES). The best performance of the NiO x /SY2 device was characterized by a short-circuit current density (J sc) of 21.76 mA cm–2, an open-circuit voltage (V oc) of 1.102 V, and a fill factor of 79.1%, corresponding to an overall PCE of 18.96%. The stability test of the PCE of the NiO x /SY2 PSC device PCE showed a decay of only 5.01% after 168 h; it retained 92.01% of its original PCE after 1000 h in Ar atmosphere. Time-resolved photoluminescence spectra of the perovskite films suggested that the hole extraction capabilities of the NiO x /SY-HTMs were better than that of the bare NiO x . The superior film morphologies of the NiO x /SY-HTMs were responsible for the performances of their devices being comparable with those of bare NiO x -based PSCs. The photophysical properties of the HTMs were analyzed through time-dependent density functional theory with the B3LYP functional.

In this study, we synthesized three simple and inexpensive (34−120 USD/g) 3,3′-bicarbazole-based hole transporting materials (BC-HTMs; NP-BC, NBP-BC and PNP-BC) through a metal-free oxidative coupling, in excellent yields (≥95%). These bicarbazoles contain phenylene or biphenylene substituents on the carbazole N atom, with extended π-conjugation achieved through phenylene units at the 6,6′-positions of the bicarbazole. When using NBP-BC as a dopant-free HTM in a p−i−n perovskite solar cell (PSC), we achieved a power conversion efficiency (PCEs) of 12.22 ± 0.54% under AM 1.5G conditions (100 mW cm −2 ); this PCE was comparable to that obtained when using PEDOT:PSS as the HTM (11.23 ± 1.02%). BC-HTMs showed the large grain size (μm) of perovskite than PEDOT:PSS-based, due to defect passivation on indium tin oxide (ITO) substrate and good hydrophobicity. Furthermore, we realized highly efficient and stable PSCs when using the p−i−n device structure ITO/NiO x /NP-BC/perovskite/PC 61 BM/BCP/Ag. The bifacial defect passivation effect of the interfacial layer improved the grain size of the perovskite layer and also enhanced the performance; the best performance of the NiO x /NP-BC device was characterized by a short-circuit current density (J sc ) of 22.38 mA cm −2 , an open-circuit voltage (V oc ) of 1.09 V, and a fill factor (FF) of 79.9%, corresponding to an overall PCE of almost 20%. This device structure has competitive potential because its performance is comparable to that of the record-high-efficiency PSCs. Under an Ar atmosphere, the PCE of the NiO x /NP-BC PSC device decayed by only 4.55% after 168 h; it retained 90.80% of its original PCE after 1000 h. A morphological study revealed that the films of the BC-HTMs were indeed smooth and hydrophobic and that the perovskite films spin-coated upon them were uniform and featured large grains (micrometer scale). Time-resolved photoluminescence (TRPL) spectra of the perovskite films suggested that the hole extraction capabilities of the NiO x /BC-HTMs were better than that of the bare NiO x . The superior film morphologies of the NiO x /BC-HTMs were responsible for the performances of their devices being comparable to those of bare NiO x -based PSCs.