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On the basis of a model which assumes a laminar boundary layer, a rate equation is derived for the vapor phase epitaxial growth of normalGaAs within a constant temperature zone. The equation can be used to predict the variation of growth rate with distance along the substrate. The predictions of the equation are shown to be in excellent agreement with the experimental results obtained with the open‐tube AsCl3‐normalGa‐N2 system. It is also shown both theoretically and experimentally that the variation of growth rate decreases with increasing gas velocity and also with decreasing substrate temperature, whereas the initial AsCl3 mole fraction has no effect on the growth rate variation.

This paper presents details concerning such spurious peaks as Fe Ka and Ni Ka radiation, which are often observed in the trace determination of metallic impurities on silicon wafers by using a monochromatic total reflection X-ray fluorescence (TXRF) analyzer. The intensity of a spurious peak varies along with changes in the incident azimuth angle and/or detected intensity of the primary X-ray beam. The origin of this phenomenon is impurities existing along the path of Xrays. This phenomenon influences the accuracy of trace TXRF analysis, and a practical detection limit of a TXRF analyzer becomes worse by approximately one order, becoming 10" atoms/cm2, than the calculated detection limit (2 -8X1010 atoms/cm2) in our case.