TOF-SIMS with MS/MS was applied to degradation analyses of OLEDs. Photoluminescence and GCIB-TOF-SIMS revealed a degraded layer and molecular weights of degradation products. MS/MS by TOF-SIMS gave more detailed structural information of degradation products than conventional TOF-SIMS, which demonstrated effectiveness of TOF-SIMS with MS/MS for degradation analyses of OLEDs.

Degradation analysis was conducted to p‐i‐n type OLED devices. PL, LDI‐MS, and GCIB‐TOF‐SIMS revealed the degraded layer was EML and molecular formula of the degradation product. GCIB‐TOF‐SIMS clarified the change of n‐dopant with the degradation.