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Double patterning ͑DP͒ has now become a fixture on the development roadmaps of many device manufacturers for half pitches of 32 nm and beyond. Depending on the device feature, different types of DP and double exposure ͑DE͒ are being considered. This paper focuses on the requirements of the most complex forms of DP, pitch-splitting ͑where line density is doubled through two exposures͒ and spacer processes ͑where a deposition process is used to achieve the final pattern͒. Budgets for critical dimension uniformity and overlay are presented along with tool and process requirements to achieve these budgets. Experimental results showing 45-nm lines and spaces using dry ArF lithography with a k 1 factor of 0.20 are presented to highlight some of the challenges. Finally, alternatives to DP are presented.