We succeeded in demonstrating single-photon generation from a single InAs quantum dot (QD) at a 1.55 µm band by current injection. A p–i–n light-emitting diode (LED), which includes a quantum dot layer, was grown on an n-InP substrate and fabricated into a nano scaled mesa structure with electrodes. Electrical pulses of 80 ps width were injected in order to generate excitons in quantum dots. We directly determined the electroluminescence (EL) and radiative lifetime of a single exciton to be 1.59 ns. Hanbury-Brown and Twiss (HBT)-type photon correlation measurements proved the antibunching behavior of exciton recombination in a current-injected quantum dot at a wavelength of 1551.2 nm. These measurements demonstrate that our QD LEDs are sources of triggered single photons in the C-band by current injection.

We investigate the exciton dynamics in a current-injected single InAs quantum dot (QD) which emits 1.55μm photons. Photon antibunching behavior is observed using a single electroluminescence line of a single QD. The radiative lifetime of this line determined by time-resolved measurement is 1.59ns. The single exciton recombination time agrees with the lifetime calculated with an eight-band kp model. We examine a high drive rate operation of the device by changing the delay time between two electrical pulses. These results demonstrate that our device has the potential to achieve telecommunication band subgigahertz single-photon emission with electrical pulses.

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