No abstract

non member, Senanayake Thilak † , non-member and Jun Imaoka † , member and Ryosuke Ishido † † † , non-member and Yuta Okawauchi † † † , non-member and Ken Nakahara † † † , non-member SUMMARY In response to fast charging systems, Silicon Carbide (SiC) power semiconductor devices are of great interest of the automotive power electronics applications as the next generation of fast charging systems require high voltage batteries. For high voltage battery EVs (Electric Vehicles) over 800V, SiC power semiconductor devices are suitable for 3-phase inverters, battery chargers, and isolated DC-DC converters due to their high voltage rating and high efficiency performance. However, SiC-MOSFETs have two characteristics that interfere with highspeed switching and high efficiency performance operations for SiC MOS-FET applications in automotive power electronics systems. One characteristic is the low voltage rating of the gate-source terminal, and the other is the large internal gate-resistance of SiC MOS-FET. The purpose of this work was to evaluate a proposed hybrid gate drive circuit that could ignore the internal gate-resistance and maintain the gate-source terminal stability of the SiC-MOSFET applications. It has been found that the proposed hybrid gate drive circuit can achieve faster and lower loss switching performance than conventional gate drive circuits by using the current source gate drive characteristics. In addition, the proposed gate drive circuit can use the voltage source gate drive characteristics to protect the gate-source terminals despite the low voltage rating of the SiC MOS-FET g a t e -s o u r c e t e r m i n a l s . .