Utilization of Tin Halide as an absorber in Perovskite solar cells is immensely recognized as a substitute of lead halide absorber because of lead material’s toxicity. Also, Tin halide based Perovskites possess a potential for higher quantum efficiency because of their enhanced light absorption capability due to the wide-ranging absorption spectrum in the visible region with a comparatively lower bandgap of 1.3 eV than lead-based Perovskites. In the present work, glass/ transparent conductive oxide (TCO)/ titanium dioxide (buffer)/ tin halide Perovskite (Absorber)/ cuprous thiocyanate (HTM)/ Metal back solar cell structure has been designed and simulated by SCAPS software which yields Power Conversion Efficiency (PCE) of 28.32% and Fill Factor (FF) of 85.17%. The effect of total defect density, thickness, Valance Band Effective Density of States (VBEDS) and Conduction Band Effective Density of States (CBEDS) for an absorber layer has been analyzed. It has been observed that VBEDS variation has achieved PCE and FF to a significant extent i.e. up to 32.47% PCE and 85.86% FF

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