Here, the resistive switching properties of Cu/Al 2 O 3 /p-Si and Cu/HfO 2 /p-Si devices are investigated in details. Both memory switching and threshold switching behaviors observed under different current compliance conditions. The transition between two switching modes is possible. Cu ion diffusion form conductive filaments inside the insulator and formation/dissociation mechanism induced the switching phenomenon. The device performances under both memory switching and threshold switching are possible for non-volatile storage memory and selector applications, respectively.