Feature profiles of poly-Si etched in Cl2/O2 plasmas have been analyzed through a mechanistic comparison between experiments and simulations. The emphasis was placed on a comprehensive understanding of the formation mechanisms for profile anomalies of tapering, microtrenching, and footing (or corner rounding near the feature bottom). Experiments were conducted in a commercial etching reactor with ultra-high-frequency plasmas by varying O2 percentage, wafer stage temperature, rf bias power, and feed gas pressure. Simulations of the feature profile evolution were done by using a semiempirical, atomic-scale cellular model based on the Monte Carlo method that we have developed. The experiments indicated that sidewall profiles become more tapered with increasing O2 addition to Cl2 plasmas, while microtrenching and footing are pronounced in pure Cl2 plasma, being suppressed with increasing O2. A comparison with the simulations indicated that the tapered profiles are caused by the deposition of etch products/by-products on feature sidewalls from the plasma, being enhanced with increasing oxygen flux (due to synergistic effects between deposition of products/by-products and surface oxidation) and being reduced with increasing ion energy and neutral reactant flux. On the other hand, the footing is attributed to the redeposition of etch products on sidewalls from the feature bottom being etched, being reduced with increasing oxygen flux, ion energy, and neutral reactant flux. Microtrenching is caused by the ion reflection from feature sidewalls on incidence, being reduced with increasing oxygen flux (partly due to surface oxidation of the feature bottom) and being enhanced and then reduced with increasing ion energy and neutral reactant flux. The tapering, footing, and microtrenching were found to be closely related to each other: the footing near the feature bottom fades away under conditions of increased tapering of sidewalls, and the microtrenching is affected significantly by the degree of footing as well as the taper angle of the sidewalls.

Feature profiles of Si etched in HBr-containing plasmas have been analyzed through a comparison between experiments and simulations. The emphasis was placed on a mechanistic understanding of the difference in the evolution of profile anomalies (such as tapering, footing, and microtrenching) during Si etching between HBr- and Cl2-based plasmas. Experiments were made with Cl2/O2/HBr chemistry by varying the HBr mixing ratio, using a commercial ultrahigh-frequency electron cyclotron resonance plasma etching reactor, where HCl/O2 chemistry was also employed to compare with that of Cl2/O2 and HBr/O2. Numerical simulations of feature profile evolution were made using a semiempirical atomic-scale cellular model based on the Monte Carlo method that we developed for Si etching in Br2, HBr, and Cl2 plasmas, where surface chemistry and kinetics include the effects of ion reflection from and/or penetration into feature surfaces on incidence. The experiments showed more vertical sidewalls with less footing and microtrenching with HBr; concretely, with increasing HBr mixing ratio in Cl2/O2/HBr plasmas, the tapering is reduced and minimized at 80% HBr where slight lateral or side etching tends to occur, the footing is reduced gradually, and the microtrenching fades away at more than 20% HBr. A comparison with simulations, with the help of separate analyses of ion reflection from surfaces on incidence, indicated that the smaller reflection probability and reflected energy fraction of Br+ on tapered sidewalls (compared to Cl+) are responsible for reduced tapering, footing, and microtrenching in HBr-containing plasmas; moreover, chemical etching effects of neutral H atoms at the feature bottom and sidewalls, arising from the larger reaction probability of H (compared to Cl), are also responsible for reduced microtrenching and for reduced tapering (and the lateral or side etching induced) therein.