We demonstrate a Ti:sapphire laser pumped directly with a green diode laser. A single 1 W InGaN diode laser operating at 518 nm is used as the pump source. Pulse durations as short as 62 fs and average output powers of up to 23.5 mW are obtained with chirped-mirror-based dispersion compensation and a semiconductor saturable absorber mirror (SESAM).

Metal–organic framework (MOF) coatings were prepared on gold electrodes through the conversion from Cu(OH)2 nanobelts to Cu3(BTC)2 MOFs.

We experimentally demonstrate photon-number squeezing at 1.55 μm using a noisy erbium-doped fiber amplifier (EDFA). We employ a collinear balanced detection (CBD) technique, where the intensity noise at a specific radio frequency is canceled between two pulse trains. In spite of substantially large excess noise (>10 dB) in an EDFA due to amplified spontaneous emission, we successfully cancel the intensity noise and achieve a shot noise limit at a specific radio frequency with the CBD technique. We exploit two sets of fiber polarization interferometers to generate squeezed light and observe a maximal photon-number squeezing of -2.6 dB.

We report InGaN-laser diode pumped Ti:Sapphire laser using a 2.5-mm-long crystal with a figure-of-merit (FOM) of ~100. CW lasing at wavelength of 800 nm with a maximum average output power of 28.6 mW is obtained.