The evolution of real-time medical diagnostic tools such as angiography and computer tomography from radiography based on photographic plates was enabled by the development of integrated solid-state X-ray photon detectors, based on conventional solid-state semiconductors. Recently, for optoelectronic devices operating in the visible and near infrared spectral regions, solution-processed organic and inorganic semiconductors have also attracted immense attention. Here we demonstrate a possibility to use such inexpensive semiconductors for sensitive detection of X-ray photons by direct photon-to-current conversion. In particular, methylammonium lead iodide perovskite (CH 3 NH 3 PbI 3 ) offers a compelling combination of fast photoresponse and a high absorption cross-section for X-rays, owing to the heavy Pb and I atoms. Solution processed photodiodes as well as photoconductors are presented, exhibiting high values of X-ray sensitivity (up to 25 µC mGy air -1 cm -3 ) and responsivity (1.9×10 4 carriers/photon), which are commensurate with those obtained by the current solid-state technology.

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As they combine decent mobilities with extremely long carrier lifetimes, organic-inorganic perovskites have opened a whole new field in optoelectronics. Measurements of their underlying electronic structure, however, are still lacking. Using angle-resolved photoelectron spectroscopy, we measure the valence band dispersion of single-crystal CH3NH3PbBr3. The dispersion of the highest energy band is extracted applying a modified leading edge method, which accounts for the particular density of states of organic-inorganic perovskites. The surface Brillouin zone is consistent with bulk-terminated surfaces both in the low-temperature orthorhombic and the high-temperature cubic phase. In the low-temperature phase, we find a ring-shaped valence band maximum with a radius of 0.043Å −1 , centered around a 0.16 eV deep local minimum in the dispersion of the valence band at the high-symmetry point. Intense circular dichroism is observed. This dispersion is the result of strong spin-orbit coupling. Spin-orbit coupling is also present in the room-temperature phase. The coupling strength is one of the largest reported so far.

Solid-state radiation detectors, using crystalline semiconductors to convert radiation photons to electrical charges, outperform other technologies with high detectivity and sensitivity. Here, we demonstrate a thin-film x-ray detector comprised with highly crystalline two-dimensional Ruddlesden-Popper phase layered perovskites fabricated in a fully depleted p-i-n architecture. It shows high diode resistivity of 1012 ohm·cm in reverse-bias regime leading to a high x-ray detecting sensitivity up to 0.276 C Gyair−1 cm−3. Such high signal is collected by the built-in potential underpinning operation of primary photocurrent device with robust operation. The detectors generate substantial x-ray photon–induced open-circuit voltages that offer an alternative detecting mechanism. Our findings suggest a new generation of x-ray detectors based on low-cost layered perovskite thin films for future x-ray imaging technologies.

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