Intrinsically, detrimental defects accumulating at the surface and grain boundaries limit both the performance and stability of perovskite solar cells. Small molecules and bulkier polymers with functional groups are utilized to passivate these ionic defects but usually suffer from volatility and precipitation issues, respectively. Here, starting from the addition of small monomers in the PbI2 precursor, a polymerization‐assisted grain growth strategy is introduced in the sequential deposition method. With a polymerization process triggered during the PbI2 film annealing, the bulkier polymers formed will be adhered to the grain boundaries, retaining the previously established interactions with PbI2. After perovskite formation, the polymers anchored on the boundaries can effectively passivate undercoordinated lead ions and reduce the defect density. As a result, a champion power conversion efficiency (PCE) of 23.0% is obtained, together with a prolonged lifetime where 85.7% and 91.8% of the initial PCE remain after 504 h continuous illumination and 2208 h shelf storage, respectively.

Defect passivation constitutes one of the most commonly used strategies to fabricate highly efficient perovskite solar cells (PSCs). However, the durability of the passivation effects under harsh operational conditions has not been extensively studied regardless of the weak and vulnerable secondary bonding between the molecular passivation agents and perovskite crystals. Here, we incorporated strategically designed passivating agents to investigate the effect of their interaction energies on the perovskite crystals and correlated these with the performance and longevity of the passivation effects. We unraveled that the passivation agents with a stronger interaction energy are advantageous not only for effective defect passivation but also to suppress defect migration. The prototypical PSCs treated with the optimal passivation agent exhibited superior performance and operational stability, retaining 81.9 and 85.3% of their initial performance under continuous illumination or nitrogen at 85 °C after 1008 h, respectively, while the reference device completely degraded during that time. This work provides important insights into designing operationally durable defect passivation agents for perovskite optoelectronic devices.

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