A new class of organic conductors, mixed valence DIPS@. polyiodides. have been used as conductive addRives in reticulate doping c# polymers. Conductive films have been prepared using three modaications of the reticulate doping technique: a Standard one-step method (direct casting), a two-step method consisting d swelling the film containing molecularly dispersed DIPS@, polyiodldes, and a recently developed method in which oxidation d molecularly dispersed DIPS@. and simuitaneous crystallization of as polyiodides in situ I s induced by treatment d the pristine film containing the donor with 12/CH2C12 vapours. The first and the third methods have been found to be the most advantageous. Conductive films with additive concentrations as low as 0.5 wt% and conductivities d Me order of lo-' S an-' were obtained. In all three methcds, the best results have been obtained when lhe conductive network consisted o f the mast conducting DIPSb, 2.281 salt. Europ. Patent 0 134 026 Jeszka J K and Wacz A 1992 h!yn A&. EchnoL 3 139 Strzelecka H and Rivory J 1980 Matec Res. BUN. 15 897 and reierences therein. Albouy P A, Pouget J P and Strzelecka H 1987 Phys. Rev. B 35 173 and references therein. h e t L C, Reynolds G A, Schneider E M and Perlstein J H 1979 Solid Stare Commun 30 1 Gionis y Fugnitto R, Meyer G, Strzelecka H and Dubis J C 1982 Mol. Cyst. Liq. Cyst. 90 153 and references therein. Strzelecka 6 Vincente R, Ribas J, Legros J P, Cassow P, Petit P and Andre J J 1991 Polyhedmn 10 687 Wan A, Kryszewski M 1989 MakmmoL Chem. Suppl.

Angle-resolved photoelectron spectroscopy study was performed on the depth profile of nitrogen atoms in silicon oxynitride (SiON) films formed by the plasma nitridation of silicon dioxide using low-electron-temperature microwave plasma. The depth profile of nitrogen near the SiON surface was confirmed to increase and its peak position moves into SiON films with an increase in the nitridation time, which improves boron immunity. A new transport and reaction model of plasma nitridation is proposed to explain the time evolution of nitrogen concentration and its depth profile in the films. Here, the density of radical nitrogen atoms decreases exponentially with an increase in the distance from the surface, and the nitrogen concentration incorporated in the SiON film is approximately proportional to the logarithmic time of plasma nitridation. It was newly found that post-nitridation annealing strongly enhances the pile-up of nitrogen atoms at the Si–SiON interface owing to their diffusion from the inward tail of the nitrogen depth profile near the surface. It is deduced that the pile-up of nitrogen atoms induces Si–H bonds at the interface, which become the main trigger for the degradation of the negative bias temperature instability of p-channel metal–oxide–silicon transistors.