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A novel lowpass filter (LPF) with a sharp roll-off and a wide stopband is presented. The proposed LPF is based on a dual-plane structure with an interdigital shape defected ground structure (DGS). The DGS exhibits a sharp roll-off and three transmission zeros. By tuning the length of the fingers, the resonant frequency can be easily changed. Based on the proposed DGS, a LPF has been designed, fabricated and measured. The transition band is from 3.11 (f c) to 3.23 GHz with −3.02 and −22.5 dB, respectively. The stopband with rejection better than 25 dB can be extended to 3.4 f c .

Lateral photovoltaic effect (LPE) can be used in position-sensitive detectors (PSDs) and has a wide application in a variety of optical transducers and sensors. In this report, a large LPE with sensitivity of 42mV/mm is observed in metal-oxide-semiconductor (MOS) structure of Cr/SiO(2)/Si. Through measuring current-voltage characteristics, we find that electron transport property in dark plays a key role and an appropriate metal thickness is crucial for obtaining a large LPE. This result is useful for applications and may explore a way to study the electron transport mechanism in nano-films' MOS structures.

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