Novel Ce(3+)- and Eu(2+)-doped lanthanum bromothiosilicate La3Br(SiS4)2:Ce(3+)and La3Br(SiS4)2:Eu(2+) phosphors were prepared by solid-state reaction in an evacuated and sealed quartz glass ampule. The La3Br(SiS4)2:Ce(3+) phosphor generates a cyan emission upon excitation at 375 nm, whereas the La3Br(SiS4)2:Eu(2+) phosphor could be excited with extremely broad range from UV to blue region (300 to 600 nm) and generates a reddish-orange broadband emission centered at 640 nm. In addition, thermal luminescence properties of La3Br(SiS4)2:Ce(3+)and La3Br(SiS4)2:Eu(2+) phosphors from 20 to 200 °C were investigated. The combination of a 450 nm blue InGaN-based LED chip with the red-emitting La3Br(SiS4)2:Eu(2+) phosphor, and green-emitting BOSE:Eu(2+) commercial phosphor produced a warm-white light with the CRI value of ∼95 and the CCT of 5,120 K. Overall, these results show that the prepared phosphors may have potential applications in pc-WLED.
Hydrophobic all-inorganic perovskite quantum dots (IPQDs) CsPbX 3 (X = Cl, Br, and I) were synthesized using conventional solution methods. IPQDs are potential materials for lasers, solar cells, and displays because of their narrow full width at halfmaximum, optically tunable wavelength, and great photoluminescence quantum yield.Their shortcomings are structurally unstable and moisture sensitive. To overcome the poor stability, we have developed a chemical modification to form GQD + PMAO@SiO 2 that enhances their photoluminescence quantum yield (from 60 tõ 90%), thermal stability (from 60 to~90 C), and photochemical stability. The combination of the green-emitting GQD + PMAO@SiO 2 and red-emitting RQD + PMAO with a 450 nm blue InGaN-based LED chip was used to fabricate a white light emitting diode with the correlated color temperature (CCT) value of 6,943 K and Commission Internationale del'Eclairage of (0.312, 0.290).
K E Y W O R D SCsPbX 3 (X = cl, Br, I), EL spectrum, IPQDs, photoluminescence, white LED
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