Based on the transfer-matrix method, the spin polarized transport properties through a ballistic graphene-based quantum tunneling junctions with the spin-orbit interaction have been investigated. It is found that the magnetoresistance (MR) oscillates with the Rashba spin-orbit interaction (RSOI) and the intrinsic spin-orbit interaction (ISOI). In addition, when the RSOI is present, the negative MR can be observed due to the spin-flip effect, whereas for the ISOI alone no such negative MR can be found. It is anticipated to apply such a phenomenon to design the electron devices based on the graphene.

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We investigate theoretically transport characteristics in a graphene-based pseudospinmagnet/superconductor junction, including the s-wave and the d-wave pairing symmetry potential in the superconducting region. It is found that the pseudospin polarization, in sharp contrast to spin polarization in the graphene-based ferromagnet/superconductor junction, holds no influence on the specular Andreev reflection for a negligible Fermi energy. Furthermore, the Fano factor is crucially affected by the zero bias state. Therefore, we suggest here that the findings could shed light on the realization of graphene-based pseudospintronics devices and provide a new way to detect the specular Andreev reflection and the zero bias state in the actual experiments.