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Highlights SIMS analysis confirmed the doping of Er into the In2O3 TF  I-V loop analysis gives reduced current memory window for In2O3:Er TF based device  High ideality factor was determined at low temperature and explained  Defect related photoconductivity was confirmed from low temperature measurement  10 K temporal response of the Au/In2O3:Er/Si confirmed removal of oxygen defects

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The advanced neuro-computing field requires new memristor devices with great potential as synaptic emulators between pre- and postsynaptic neurons. This paper presents memristor devices with TiO2 Nanoparticles (NPs)/Ag(Silver) and Titanium Dioxide (TiO2) Nanoparticles (NPs)/Au(Gold) electrodes for synaptic emulators in an advanced neurocomputing application. A comparative study between Ag(Silver)- and Au(Gold)-based memristor devices is presented where the Ag electrode provides the improved performance, as compared to the Au electrode. Device characterization is observed by the Scanning Electron Microscope (SEM) image, which displays the grown electrode, while the morphology of nanoparticles (NPs) is verified by Atomic Force Microscopy (AFM). The resistive switching (RS) phenomena observed in Ag/TiO2 and Au/TiO2 shows the sweeping mechanism for low resistance and high resistance states. The resistive switching time of Au/TiO2 NPs and Ag/TiO2 NPs is calculated, while the theoretical validation of the memory window demonstrates memristor behavior as a synaptic emulator. Measurement of the capacitor–voltage curve shows that the memristor with Ag contact is a good candidate for charge storage as compared to Au. The classification of 3 × 3 pixel black/white image is demonstrated by the 3 × 3 cross bar memristor with pre- and post-neuron system. The proposed memristor devices with the Ag electrode demonstrate the adequate performance compared to the Au electrode, and may present noteworthy advantages in the field of neuromorphic computing.