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We report the growth of silicon carbide (SiC) nanowires on silicon substrates by metal organic chemical vapor deposition (MOCVD) using dimethylvinyllsilane [CH2CHSi(CH3)Cl2] as a source gas and metal catalysts of Ni and Fe. Various growth conditions such as the growth temperature and the pressure of the source gas are examined to achieve high yield growth of SiC nanowires and to control their shape. No SiC nanowires were formed when using Fe. In contrast, by using Ni catalyst, numerous SiC nanowires of about 30 nm thick can be grown at the pressure of the source gas of 30 Pa at 800 °C. Their microstructure is revealed by scanning electron microscopy (SEM) and transmission electron microscope (TEM).

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Abstract:We pursue unique direct writing approaches with femtosecond fiber laser and relevant photonic manufacturing in developing various micro-nano-devices for microelectronics, energy and sensing applications. In this paper, we will present our research progresses on four directions: direct writing of microball lenses for super-wide angle imaging, developing innovative Au/reduce graphene oxide(Au/rGO) super-capacitors with high rates and fast response, multilayer supercapacitors directly written on polyimide and interdigitated capacitance sensors.

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