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Positron lifetime measurements in neutron-irradiated Cz silicon crystals have been performed at room temperature after annealing at different temperatures between 100°C and 800°C. Two-component fitting of the positron lifetime spectra was carried out. It is suggested that the short lifetime component is a weighted average lifetime of the positrons in the bulk and those trapped at monovacancy-substitutional oxygen complexes, while the long lifetime component is an average lifetime of the positrons trapped at divacancies or divacancy-substitutional oxygen complexes and those trapped at quadrivacancy-substitutional oxygen complexes. The two-component data are analyzed using an extension of the trapping model to obtain the positron trapping rates at these vacancy-type defects. The annealing of these defects is discussed.

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Many studies have been reported on the root potentials, since the publication of the first systematic research by Barron and Matthews (1). The essential points, however, namely the structural elements responsible for them and the mechanism of their production, remain still obscure. During the course of investigation on these, the present authors came upon an idea to divide both ventral and dorsal root potentials into two components. The experimental basis of this idea and its bearings on the problem concerning the origin of these potentials are described in the present report.