We experimentally demonstrate a 16 × 16 non-blocking optical switch fabric with a footprint of 10.7 × 4.4 mm². The switch fabric is composed of 56 2 × 2 silicon Mach-Zehnder interferometers (MZIs), with each integrated with a pair of TiN resistive micro-heaters and a p-i-n diode. The average on-chip insertion loss at 1560 nm wavelength is ~6.7 dB and ~14 dB for the "all-cross" and "all-bar" states, respectively, with a loss variation of ± 1 dB over all routing paths. The measured rise/fall time of the switch upon electrical tuning is 3.2/2.5 ns. The switching functionality is verified by transmission of 20 Gb/s on-off keying (OOK) and 50 Gb/s quadrature phase-shift keying (QPSK) optical signals.

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We present the experimental demonstration of a 4 × 4 silicon electro-optic (EO) switch fabric based on a Benes architecture. Double-ring-assisted Mach-Zehnder interferometers (DR-MZIs) are utilized as the basic switch elements. Silicon resistive microheaters and p-i-n diodes are embedded in both of the microrings of the DR-MZIs for low-loss thermooptic (TO) phase correction and high-speed switching operation, respectively. The TO tuning power dissipated to align all resonances is 22.37 mW. The maximum EO tuning power required to switch all DR-MZIs is only 1.38 mW. The average on-chip insertion loss is in the range of 4-5.8 dB for all switching states. The transmission spectrum measurement shows that the device can perform switching in a ∼35-GHz spectral window with the worst crosstalk being −18.4 dB.

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