Silicon (Si) is generally considered as a poor photon emitter, and various scenarios have been proposed to improve the photon emission efficiency of Si. Here, we report the observation of a burst of the hot electron luminescence from Si nanoparticles with diameters of 150–250 nm, which is triggered by the exponential increase of the carrier density at high temperatures. We show that the stable white light emission above the threshold can be realized by resonantly exciting either the mirror-image-induced magnetic dipole resonance of a Si nanoparticle placed on a thin silver film or the surface lattice resonance of a regular array of Si nanopillars with femtosecond laser pulses of only a few picojoules, where significant enhancements in two- and three-photon-induced absorption can be achieved. Our findings indicate the possibility of realizing all-Si-based nanolasers with manipulated emission wavelength, which can be easily incorporated into future integrated optical circuits.