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Chalcogenide perovskites (such as BaZrS3) are gaining increasing attention for solar cells due to their lead-free nature and superior environmental stability. However, a major limitation of BaZrS3 is that its bandgap (∼1.75 eV) is significantly larger than the ideal bandgap (∼1.34 eV) required to achieve the maximum theoretical efficiency for a single-junction photovoltaic cell. In this study, we demonstrate the reduction in bandgap from 1.75 to 1.4 eV through in situ alloying of titanium (Ti) during chemical vapor deposition growth, forming BaZr1–x Ti x S3 thin films. Theoretical study showed good agreement with experimental observations, demonstrating feasibility of bandgap tuning of BaZrS3 films.

Looming concerns regarding scarcity, high prices, and safety threaten the long-term use of lithium in energy storage devices. Calcium has been explored in batteries because of its abundance and low cost, but the larger size and higher charge density of calcium ions relative to lithium impairs diffusion kinetics and cyclic stability. In this work, an aqueous calcium–ion battery is demonstrated using orthorhombic, trigonal, and tetragonal polymorphs of molybdenum vanadium oxide (MoVO) as a host for calcium ions. Orthorhombic and trigonal MoVOs outperform the tetragonal structure because large hexagonal and heptagonal tunnels are ubiquitous in such crystals, providing facile pathways for calcium–ion diffusion. For trigonal MoVO, a specific capacity of ∼203 mAh g −1 was obtained at 0.2C and at a 100 times faster rate of 20C, an ∼60 mAh g −1 capacity was achieved. The open-tunnel trigonal and orthorhombic polymorphs also promoted cyclic stability and reversibility. A review of the literature indicates that MoVO provides one of the best performances reported to date for the storage of calcium ions.

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The non-toxic and stable chalcogenide perovskite BaZrS3 fulfills many key optoelectronic properties for a high-efficiency photovoltaic material. It has been shown to possess a direct band gap with a large absorption coefficient and good carrier mobility values. With a reported band gap of 1.7–1.8 eV, BaZrS3 is a good candidate for tandem solar cell materials; however, its band gap is significantly larger than the optimal value for a high-efficiency single-junction solar cell (∼1.3 eV, Shockley–Queisser limit)thus doping is required to lower the band gap. By combining first-principles calculations and machine learning algorithms, we are able to identify and predict the best dopants for the BaZrS3 perovskites for potential future photovoltaic devices with a band gap within the Shockley–Queisser limit. It is found that the Ca dopant at the Ba site or Ti dopant at the Zr site is the best candidate dopant. Based on this information, we report for the first time partial doping at the Ba site in BaZrS3 with Ca (i.e., Ba1–x Ca x ZrS3) and compare its photoluminescence with Ti-doped perovskites [i.e., Ba­(Zr1–x Ti x )­S3]. Synthesized (Ba,Ca)­ZrS3 perovskites show a reduction in the band gap from ∼1.75 to ∼1.26 eV with <2 atom % Ca doping. Our results indicate that for the purpose of band gap tuning for photovoltaic applications, Ca-doping at the Ba-site is superior to Ti-doping at the Zr-site reported previously.