is a promising material for nanoelectronics; however, the lack of nanofabrication tools and processes has made it very challenging to realize nanometer-scale electronic devices from monolayer MoS 2 . Here, we demonstrate the fabrication of monolayer MoS 2 nanoribbon field-effect transistors as narrow as 30 nm using scanning probe lithography (SPL). The SPL process uses a heated nanometer-scale tip to deposit narrow nanoribbon polymer structures onto monolayer MoS 2 . The polymer serves as an etch mask during a XeF 2 vapor etch, which defines the channel of a field-effect transistor (FET). We fabricated seven devices with a channel width ranging from 30 to 370 nm, and the fabrication process was carefully studied by electronic measurements made at each process step. The nanoribbon devices have a current on/off ratio > 10 4 and an extrinsic field-effect mobility up to 8.53 cm 2 /(V s). By comparing a 30 nm wide device with a 60 nm wide device that was fabricated on the same MoS 2 flake, we found the narrower device had a smaller mobility, a lower on/off ratio, and a larger subthreshold swing. To our knowledge, this is the first published work that describes a working transistor device from monolayer MoS 2 with a channel width smaller than 100 nm.

We examine the quenched fraction of central and satellite galaxies as a function of galaxy stellar mass, halo mass, and the matter density of their large scale environment. Matter densities are inferred from our ELUCID simulation, a constrained simulation of local Universe sampled by SDSS, while halo masses and central/satellite classification are taken from the galaxy group catalog of Yang et al. The quenched fraction for the total population increases systematically with the three quantities. We find that the 'environmental quenching efficiency', which quantifies the quenched fraction as function of halo mass, is independent of stellar mass. And this independence is the origin of the stellar massindependence of density-based quenching efficiency, found in previous studies. Considering centrals and satellites separately, we find that the two populations follow similar correlations of quenching efficiency with halo mass and stellar mass, suggesting that they have experienced similar quenching processes in their host halo. We demonstrate that satellite quenching alone cannot account for the environmental quenching efficiency of the total galaxy population and the difference between the two populations found previously mainly arises from the fact that centrals and satellites of the same stellar mass reside, on average, in halos of different mass. After removing these halo-mass and stellar-mass effects, there remains a weak, but significant, residual dependence on environmental density, which is eliminated when halo assembly bias is taken into account. Our results therefore indicate that halo mass is the prime environmental parameter that regulates the quenching of both centrals and satellites. Subject headings: dark matter -large-scale structure of the universe -galaxies: halos -methods: statistical

A new compound material of 2D hydrofluorinated graphene (HFG) is demonstrated whose relative hydrogen/fluorine concentrations can be tailored between the extremes of either hydrogenated graphene (HG) and fluorinated graphene (FG). The material is fabricated through subsequent exposures to indirect hydrogen plasma and xenon difluoride (XeF2). Controlling the relative concentration in the HFG compound enables tailoring of material properties between the extremes offered by the constituent materials and in‐plane patterning produces micrometer‐scale regions with different surface properties. The utility of the technique to tailor the surface wettability, surface friction, and electrical conductivity is demonstrated. HFG compounds display wettability between the extremes of pure FG with contact angle of 95° ± 5° and pure HG with contact angle of 42° ± 2°. Similarly, the HFG surface friction may be tailored between the two extremes. Finally, the HFG electrical conductivity tunes through five orders of magnitude when transitioning from FG to HG. When combined with simulation, the electrical measurements reveal the mechanism producing the compound to be a dynamic process of adatom desorption and replacement. This study opens a new class of 2D compound materials and innovative chemical patterning with applications for atomically thin 2D circuits consisting of chemically/electrically modulated regions.

During epithelial-mesenchymal transition (EMT), reprogramming of gene expression is accompanied by histone modifications. Whether EMT-promoting signaling directs functional changes in histone methylation has not been established. We show here that the histone lysine methyltransferase SETDB1 represses EMT and that, during TGF-b-induced EMT, cells attenuate SETDB1 expression to relieve this inhibition. SETDB1 also controls stem cell generation, cancer cell motility, invasion, metastatic dissemination, as well as sensitivity to certain cancer drugs. These functions may explain the correlation of breast cancer patient survival with SETDB1 expression. At the molecular level, TGF-b induces SETDB1 recruitment by Smad3, to repress Smad3/4-activated transcription of SNAI1, encoding the EMT "master" transcription factor SNAIL1. Suppression of SNAIL1-mediated gene reprogramming by SETDB1 occurs through H3K9 methylation at the SNAI1 gene that represses its H3K9 acetylation imposed by activated Smad3/4 complexes. SETDB1 therefore defines a TGF-b-regulated balance between histone methylation and acetylation that controls EMT.

An abnormal VEEG is a risk factor for seizure recurrence in patients with a first unprovoked seizure, especially if epileptiform discharges past. The recurrence risks were 73.2% in the epileptiform discharges abnormality VEEG group, which may help the diagnosis of epilepsy according to the practical clinical definition of epilepsy.