Due to their enhanced performance and simplicity in manufacturing, scalability, and versatility, lead-halide perovskite-based solar cells (HPSCs) have received much attention in the domains of energy. Lead is present in nature as a poisonous substance that causes various issues to climate and human health and prevents its further industrialization. Over the past few years, there has been a noticeable interest in exploring some alternative lead-free perovskites. However, owing to some intrinsic losses, the performance that may be achieved from these photovoltaics is not up to standards. Thus, for the purpose of efficiency improvement, a comprehensive simulation is required to comprehend the cause of these losses. In the current research, an investigation into how to employ the promisingly efficient lead-free, allinorganic cesium tin−germanium iodide (CsSnGeI 3 ) perovskites as the photoactive layer in HPSCs was performed. Results exhibited a high efficiency of 12.95% with a CsSn 0.5 Ge 0.5 I 3 perovskite thickness of 0.6 μm and a band gap of 1.5 eV at room temperature. High efficiency may be achieved using phenyl-C61-butyric acid methyl ester (PCBM) as an electron transport material because of its favorable energy-level alignment with the perovskite material. The research further tested the perovskite layer thickness and defect density in depth. The results showed that the carrier diffusion lengths have a big effect on how well the HPSC works.
According to recent reports, planar structure-based organometallic perovskite solar cells (OPSCs) have achieved remarkable power conversion efficiency (PCE), making them very competitive with the more traditional silicon photovoltaics. A complete understanding of OPSCs and their individual parts is still necessary for further enhancement in PCE. In this work, indium sulfide (In2S3)-based planar heterojunction OPSCs were proposed and simulated with the SCAPS (a Solar Cell Capacitance Simulator)-1D programme. Initially, OPSC performance was calibrated with the experimentally fabricated architecture (FTO/In2S3/MAPbI3/Spiro-OMeTAD/Au) to evaluate the optimum parameters of each layer. The numerical calculations showed a significant dependence of PCE on the thickness and defect density of the MAPbI3 absorber material. The results showed that as the perovskite layer thickness increased, the PCE improved gradually but subsequently reached a maximum at thicknesses greater than 500 nm. Moreover, parameters involving the series resistance as well as the shunt resistance were recognized to affect the performance of the OPSC. Most importantly, a champion PCE of over 20% was yielded under the optimistic simulation conditions. Overall, the OPSC performed better between 20 and 30 °C, and its efficiency rapidly decreases above that temperature.
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