No abstract

Metal oxide resistive random access memory (RRAM) is a novel device that provides an alternate solution for existing CMOS memory devices. In RRAM, correlate the experimental result with a simulated result by a unique model is a critical task. This work focused on the validation of silicon substrate-based fabricated single layer annealed and electroformed at 80oC ambient temperature (A-80) RRAM cell. The experimental result concludes that the proposed Pt/HfO2/Pt device provides the forming voltage of 3.8 V, Vset = 1.7 V, and Vreset=-0.8 V. Switching results are compared with the simulated result which is working based on non-linear ion drift, Yakopcic and voltage threshold adaptive memristor (VTEAM) models. VTEAM model gives a closure relationship with experimental data and well suited for our fabricated device. Further, the VTEAM model is modified to contribute accurate results and one of the standard model metrics, accuracy is analysed for a modified VTEAM model. Statistical analysis proves that, the mean error percentage of modified VTEAM and VTEAM models against experimental outcomes are 21.4% and 25.3 % respectively