Abstract-The High-Luminosity Large Hadron Collider (HL-LHC) is a novel machine configuration which will rely on a number of key innovative technologies to enhance the performance of the present LHC machine as of 2025. The upgrade will also involve increased radiation levels which need to be predicted by combining scaled measurements and calculations in order to define the qualification requirements for electronic systems. In this work we describe such levels first of all by introducing the monitoring and calculation approaches used for the present LHC machine, and secondly by applying scaling factors and dedicated simulations for the future HL-LHC accelerators. We present the levels according to the different areas relevant for the operation of electronics-based equipment, and discuss the associated Radiation Hardness Assurance implications.

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Proton experimental data are analyzed for a 16-Mbit Thin-Film-Transistor (TFT) PMOS Static Random Access Memory (SRAM) with DRAM capacitors. The presence of high-Z materials as tungsten causes an unusual increase of the Single Event Upset (SEU) proton cross-section for the energies above 100MeV. Monte-Carlo simulations reproduce the experimentally measured cross-sections up to 480MeV and predict a further increase up to GeV energies. The implications of this increase are analyzed in the context of the LHC and other radiation environments where a significant fraction of the fluence lies above 100MeV.

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