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We comparatively studied the growth conditions of Y 2 O 3 films and CeO 2 films on biaxially textured Ni and NiW tapes. We found that the windows of both substrate temperatures and oxygen partial pressures for the proper growth of CeO 2 films were wider than those of Y 2 O 3 films. XRD data showed that the qualities of in-plane and out-of-plane textures of the two types of films were almost similar. The SEM observations indicated that the surface of the CeO 2 films was smoother than those of Y 2 O 3 films. The inferiority of CeO 2 films to Y 2 O 3 films was crack formation. However, we found that if YSZ over-layers were grown on the CeO 2 films using dc-reactive sputtering, the cracks were not observed on the surface of the YSZ films anymore.

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