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Semiconductor junctions, for example, pn-intersection and Schottky intersection have been very significant as essential components for different semiconductor gadgets. The break-down voltage of the junction PN-intersection relies upon the polluting influence fixations in semiconductors. An opposite voltage is supported in the exhaustion layer thickness which is corresponding to the square of base voltage. The breakdown happens, when the electric field with an intersection arrives at the semiconductor regardless of whether the consumption layer can be extended substantially. To accomplish higher go down voltage, a wide band hole semiconductor, for example, silicon carbide has been examined. The electron gadgets utilizing silicon carbide may undergo serious issues. In any case, the breakdown system of the intersection utilizing silicon carbide is as yet equivalent to that of the conventional junctions. As of late, GaN utilized electron gadgets have developed as cutting-edge high force exchanging gadgets inferable from their high breakdown field. A few papers have revealed that GaN-based HFETs is directly expanded by expanding the junction dividing between the door and channel electrodes. This conduct is unique in relation to that of the customary junctions.

Recently Wireless Sensor Networks (WSNs) are a very promising research field since they find application in many different areas. In applications involving networks of sensorequipped autonomous vehicles, it is crucial to have an energyefficient communication protocol due to the limited on-board batteries. Unlike traditional sensor networks, vehicle sensor networks typically consist of only a small number of nodes. We exploit this fact in our protocol design by optimizing specifically for these mobile small scale networks. Our proposed solution, ConverSS, is a hybrid MAC/routing protocol that is energy-efficient for vehicle sensor networks. The results show that our schemes effectively support increased sleeping interval with low energy consumption.

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