We have fabricated a new class of diode from two different polytypes of boron carbide. Diodes were fabricated by chemical vapour deposition from two different isomers of closo-dicarbadodecaborane: closo-1,2-dicarbadodecaborane (orthocarborane, C 2 B 10 H 12) and closo-1,7-dicarbadodecaborane (metacarborane, C 2 B 10 H 12), differing only by the carbon placement within the icosahedral cage. We find that the electronic structure (molecular orbitals) of these two isomer molecules and the resulting decomposition reflect the tendency of metacarborane to form an n-type semiconductor while orthocarborane is an effective source compound for a slightly p-type semiconducting boron carbide. The diodes of this novel class are effective solid state neutron detectors, and have a number of unique applications.

Electronic Structure of Tantalum Oxynitride Perovskite Photocatalysts. -The absolute conduction and valence band energy levels of MTaO2N (M: Ca, Sr, Ba) and PrTaON2, which are promising candidates for photocatalytic splitting of water under visible light irradiation, are determined by a combination of XPS, Kelvin probe force microscopy, UV/VIS spectroscopy, and depth-resolved cathodoluminescence spectroscopy. All four compounds have conduction band edges that lie above the reduction potential for water and valence band edges which lie near the oxidation potential of water. The position of the conduction band edge is closely linked to the Ta-O/N-Ta bond angles, whereas the position of the valence band edge is more sensitive to the oxygen--to-nitrogen ratio. -(BALAZ*, S.; PORTER, S. H.; WOODWARD, P. M.; BRILLSON, L. J.; Chem. Mater. 25 (2013) 16, 3337-3343,

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Boag, N.M.; Nelson, K.; Montag, B.; Brand, Jennifer I.; and Dowben, Peter A., "The electronic structure of 1,2-PCB 10 H 11 molecular films: a precursor to a novel semiconductor" (2006 Abstract: The band gaps and electronic structure of un doped fi lms of molecular icosahedra of closo-1-phospha-2 carbadodecaborane (1,2-PCB 10 H 11 ) are reported.