A new concept of semiconductor wafer bonding, mediated by optical wavelength conversion materials, is proposed and demonstrated. The fabrication scheme provides simultaneous bond formation and interfacial function generation, leading to efficient device production. Wavelength-converting functionalized semiconductor interfacial engineering is realized by utilizing an adhesive viscous organic matrix with embedded fluorescent particles. The bonding is carried out in ambient air at room temperature and therefore provides a cost advantage with regard to device manufacturing. Distinct wavelength conversion, from ultraviolet into visible, and high mechanical stabilities and electrical conductivities in the bonded interfaces are verified, demonstrating their versatility for practical applications. This bonding and interfacial scheme can improve the performance and structural flexibility of optoelectronic devices, such as solar cells, by allowing the spectral light incidence suitable for each photovoltaic material, and photonic integrated circuits, by delivering the respective preferred frequencies to the optical amplifier, modulator, waveguide, and detector materials.

Semiconductor bonding mediated by a transparent conductive oxide, ZnO, prepared by a simple solution spin‐on process, is presented. The ZnO synthesis, sintering, and bonding processes are realized in a single step, thus providing a highly efficient semiconductor bonding method. The ZnO‐mediated bonds simultaneously exhibit high mechanical stability, electrical conductivity, and optical transparency. The bonding's high tolerance for the roughness of the surfaces to be bonded is also demonstrated, due to the soft, deformable interfacial contact agent that is solidified in the bonding process, in contrast to direct bonding and bonding mediated by solid‐state materials. Furthermore, the fabrication and operation of solar‐cell devices are demonstrated using the developed ZnO‐mediated bonding technique, with current paths across the bonded interfaces, thus verifying the practical applicability of the bonding scheme. The developed ZnO‐mediated bonding scheme leads to low‐cost, high‐performance heterostructured optoelectronic device fabrication and integration.

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