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Zr-doped HfOx high-k gate dielectric films with TiN gate electrode were sputter deposited on 1 nm SiO2 or SiOxNy interface layer. Electrical properties including the equivalent oxide thickness, flat band voltage, interface state density, and the oxide charge trapped density of the MOS capacitors were investigated with respect to fabrication parameters such as Zr doping condition, post deposition annealing ambient, and type of bottom interface layer. Excellent electrical properties were obtained for films deposited at low sputtering powers. An equivalent oxide thickness of 1.7 nm was achieved for Zr-doped HfOx on a 1 nm SiO2 interface. The leakage current is four orders of magnitude lower than that of the SiO2 film. The magnitude and polarity of the flat band voltage is influenced by the high-k film deposition method, the dopant concentration, and the post deposition annealing condition. With the same SiOxNy interface layer, the Zr-doped film has a lower leakage current and a smaller interface density of states than the undoped film.

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