The SrTiO 3 (STO) thin films on a Pt/Ti/SiO 2 /Si substrate were synthesized using a sol-gel method to form a metal-insulator-metal structure. This device shows the bipolar resistance switching (BRS) behavior for a compliance current I cc of less than 0.1 mA but exhibits soft breakdown at a higher level of compliance current. A transition from the BRS behavior to the stable unipolar resistive switching behavior (URS) was also observed. We found that the BRS behavior may be controlled by the structure interface while the URS behavior is likely bulk controlled. Our study indicates that the external compliance current is a key factor in resistance switching phenomenon of STO thin films.

Serious environmental issues triggered by abundant carbon dioxide emissions and gradual depletion of traditional fossil fuels are calling for the development of renewable energy. Efficient catalytic valorization of renewable liquid/solid...

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Water pollution has become one of the important global environmental pollution problems, wherein a variety of toxic and persistent organic pollutants in water are posing a major threat to ecological...

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