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Distibines Sb2R4 react with trimethylgallane and -indane (MMe3; M = Ga, In) with formation of heterocycles of the general type [Me2MSbR‘2]3 (R‘ = Me, M = Ga (2), In (3); R‘ = i-Pr, M = Ga (4)), whereas only decomposition reactions were observed for reactions with trialkylalanes. However, the mononuclear distibine−alane adduct [Al(t-Bu)3][Sb2(i-Pr)4] (1) with the distibine serving as monodentate ligand could be isolated and structurally characterized. In addition, reactions of the dibismuthine Bi2Et4 with M(t-Bu)3 (M = Al, Ga) were investigated, resulting in the formation of the simple Lewis acid−base adducts Et3Bi-M(t-Bu)3 (M = Al (5), Ga (6)). 1−6 were characterized by multinuclear NMR and mass spectroscopy and elemental analysis as well as single-crystal X-ray diffraction.

Tetraalkyldistibanes Sb 2 R 4 (R = nPr, iBu) react with tBu 3 M (M = Al, Ga) at -30°C with the formation of the Lewis acidbase adducts [ iPr 4)]. Compounds 1 and 2 are stable in solution whereas 3 undergoes a Sb-Sb bond-breakage reaction with the subsequent formation of [tBu 2 GaSb(nPr) 2 ] 2 (5). The same trend was observed for the reaction of Sb 2 (iBu) 4 with tBu 3 Ga, which yielded the heterocyclic stibanylgallane

The potential application of [t-Bu2GaSbEt2]2 (1) to serve as a single-source precursor for the deposition of GaSb films was investigated in detail. Crystalline GaSb films (sphalerite type) were grown on Si(100) by high-vacuum metal−organic chemical vapor deposition between 350 and 550 °C without the use of any carrier gas. The thermal properties of 1 were investigated by differential scanning calorimetry and thermogravimetric analysis/differential thermal analysis, whereas the GaSb films were characterized in detail by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, atomic force microscopy, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy, and Auger electron spectroscopy.

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