In recent, research about the oxide semiconductor based photo sensor such as photosensitive oxide TFTs and diodes has been emphasized. In this study, we report a new photosensitive a-IGZO diode for photo sensor in interactive display. The diode has high on/off ratio and low leakage current density of ~10 -9 A/cm 2 . Also, the diode has a great photosensitivity of ~10 7 and ~10 4 at reverse bias under ultra-violet (UV) and visible light conditions, respectively.

Recently, the digital X‐ray detector (DXD) technology requires high quality and high frame rate dynamic images, so efforts are being made to apply an oxide semiconductor (OS) thin film transistor (TFT) to the DXD backplane as a switching device instead of an amorphous Si (a‐Si) TFT. In order for the OS TFT to be used as a switching device of the X‐ray detector, it is necessary to study about the degradation parameters of the OS TFT under X‐ray irradiation. We confirmed that the threshold voltage (Vth) of the InGaZnO (IGZO) TFTs shifted negatively without s‐factor degradation according to X‐ray exposure. To understand these characteristics, we evaluated the X‐ray degradation characteristics of various methods.

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