Copper indium diselenide (CuInSe2) films have been prepared by pulse electrodeposition technique on Molybdenum substrate followed by post-deposition annealing at 550°C. Optimization of pulse parameters by varying the pulse duration (duty cycle) in order to achieve high quality films has been reported. Appropriate manipulation of pulse parameters has resulted in a novel flake-like crystallite morphology and better control over the composition of individual elements. The CIS thin films were comprehensively characterized using SEM-EDS, FIB, XRD and UV-DRS to study their morphology, phase constitution, etc. and PEC (photoelectrochemistry) measurements were also carried out to ascertain the photoelectrochemical performance of the CIS absorber layer. The bandgap of the CIS films was determined to be 1.02 eV. The flake like crystallite morphology observed in CIS thin films under the optimized processing conditions was found to yield enhanced cathodic photoresponse under solar simulated light with a photocurrent density of 20 μA/cm2 (observed at a potential of −0.6 V vs. SCE). The films exhibited a photoresponse typical of a p-type semiconductor.

Fluorene-based hole transport materials (HTMs) with terminating thiophene units are explored, for the first time, for antimony sulfide (Sb 2 S 3 ) solar cells. These HTMs possess largely simplified synthesis processes and high yields compared to the conventional expensive hole conductors making them reasonably economical. The thiophene unit-linked HTMs have been successfully demonstrated in ultrasonic spray-deposited Sb 2 S 3 solar cells resulting in efficiencies in the range of 4.7−4.9% with an average visible transmittance (AVT) of 30−33% (400−800 nm) for the cell stack without metal contact, while the cells fabricated using conventional P3HT have yielded an efficiency of 4.7% with an AVT of 26%. The study puts forward cost-effective and transparent HTMs that avoid a post-coating activation at elevated temperatures like P3HT, devoid of parasitic absorption losses in the visible region and are demonstrated to be well aligned for the band edges of Sb 2 S 3 thereby ascertaining their suitability for Sb 2 S 3 solar cells and are potential candidates for semitransparent applications.

Solar cells based on polycrystalline Cu(In,Ga)Se2 absorber layers have yielded higher conversion efficiency among all the thin-film technologies. CIGS thin-films possess large optical absorption coefficient (≈ 10 5 cm-1) and a suitable bandgap of ≈ 1.20 eV for an ideal stoichiometry of CuIn0.7Ga0.3Se2. In the present study, Direct Current (DC) and Pulsed Current (PC) electrodeposition techniques are employed to obtain the near ideal stoichiometric CIGS thin-films on a Mo foil using a two electrode system at a constant potential. The as-deposited films are annealed at 550 °C under Ar atmosphere. Characterization of the annealed CIGS films is performed using SEM-EDS, XRD, Raman Spectroscopy and Photoelectrochemistry to study the morphology, stoichiometry, phase constitution and the photoelectrochemical response under solar simulated light. PC electrodeposition offered suitable manipulation of various parameters, which has helped in obtaining a better quality stoichiometric single phase chalcopyrite structured CIGS thin films with the elimination of unwanted secondary phases like Cu2-xSe. An improved photoelectrochemical performance, characteristic of a p-type semiconductor, is observed for the PC deposited CIGS films.