n-Type (phosphorus-doped) diamond is a promising material for diamond-based electronic devices. However, realizing good ohmic contacts for phosphorus-doped diamonds limits their applications. Thus, the search for non-conventional ohmic contacts has become a hot topic for many researchers. In this work, nanocarbon ohmic electrodes with enhanced carrier collection efficiency were deposited by coaxial arc plasma deposition. The fabricated nanocarbon ohmic electrodes were extensively examined in terms of specific contact resistance and corrosion resistance. The circular transmission line model theory was used to estimate the charge collection efficiency of the nanocarbon ohmic electrodes in terms of specific contact resistance at a specific voltage range (5–10 V); they exhibited a specific contact resistance of 1 × 10−3 Ωcm2. The result revealed one order reduction in the specific contact resistance and, consequently, a potential drop at the diamond/electrode interface compared to the conventional Ti electrodes. Moreover, the fabricated nanocarbon electrodes exhibited high mechanical adhesion and chemical inertness over repeated acid treatments. In device applications, the nanocarbon electrodes were evaluated for Ni/n-type diamond Schottky diodes, and they exhibited nearly one order enhancement in the rectification ratio and a fast charge collection at lower biasing voltages.
Diamond-based Schottky barrier diodes (SBDs) are involved in many technological applications. In a conventional SBD fabrication process that involves interface carbide forming ohmic contacts, a post-annealing step is necessary for ohmic contacts to achieve their operational efficiency. However, this step deteriorates the essential oxygen coverage at the diamond surface which in turn affects SBDs uniformity. So, an additional oxygen termination step is necessary prior to Schottky metal deposition. In this study, a non-conventional fabrication method is introduced using corrosion-resistant nanocarbon ohmic contacts fabricated by coaxial arc plasma deposition. As a result, The SBD parameters including ideality factors and barrier heights exhibited high uniformity with a very small standard deviation for the proposed fabrication process flow when compared with process flow including a post-annealing step. Furthermore, the contact behavior of nanocarbon ohmic electrodes is investigated on a heavily boron-doped diamond film using circular transmission line model theory and a specific contact resistance of ~ 10-5 Ωcm2 is obtained, suggesting the practical application of nanocarbon ohmic contacts for diamond-based electronic devices.
The realization of diamond‐based advanced devices is interrelated with the fabrication of practical ohmic contacts. Contrary to boron‐doped, the phosphorus‐doped diamonds with interface carbide forming Ti‐based conventional ohmic contacts find their limitation in device fabrication due to the high contact resistance. Herein, nanocarbon ohmic contacts are deposited by a coaxial arc plasma gun on semiconducting diamonds, and their composite structure which facilitates exceptional contact properties is explored. A comparative electrical characterization between nanocarbon ohmic contacts and conventional Ti‐based contacts is performed on a heavily phosphorus‐doped diamond, and they exhibited one‐order declination in specific contact resistance. In addition to the low contact resistance, an ideal ohmic electrode is preferable to have good mechanical adhesion and corrosion resistance for device applications. The contact behavior of n‐type diamond/nanocarbon against an extremely corrosive environment realized by boiling H2SO4 + HNO3 solution is analyzed. The nanocarbon ohmic contacts exhibit excellent corrosion resistance and mechanical adhesion over conventional Ti‐based contacts. A similar trend is also observed for nanocarbon contacts on boron‐doped diamonds. The modest effect on the transfer length of the nanocarbon contacts with respect to acid treatment sessions indicates a tightly bonded diamond/nanocarbon interface and actively suggests their application in highly‐corrosive and harsh environments.
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