Optimization of bonding parameters to develop a low temperature adhesive wafer bonding process for silicon was studied. SU-8 was used as the adhesive. The Key Process Input Variables were soft bake temperature, UV exposure and bonding temperature. The soft bake temperatures were 70 o C, 90 o C and 95 o C. UV exposure energies were 50 mJ/cm 2 , 100 mJ/cm 2 and 150 mJ/cm 2 and bonding temperatures of 90 o C, 115 o C and 140 o C were studied to optimize the curing process. The quality of the bonds was determined by two Key Process Output Variables: the fraction of interfacial area in intimate contact, measured by void area, and the strength of the bond interaction, measured by tensile strength. A general linear statistical model was used to determine the impact of the KPIVs on the KPOVs. The optimum conditions are soft bake temperature: 90 o C, UV exposure: 100 mJ/cm 2 and bonding temperature: 115 o C.