Increasing the electrical performance of the MOSFETs with contact etch stop layer (CESL) and SiGe channel technologies in strain engineering is indeed approached. Using silicon capping layer performs the benefits on the smoothness of channel surface and the prevention of germanium penetration from SiGe layer. In this study, the deposited capping layer thicknesses with SiGe channel of (110) substrate wafer were 1.5 and 3.0 nm on the poly gate. The interesting device parameters including drive current, transconductance, threshold voltage (V T ) and subthreshold swing (S.S.) with temperature effect are systematically analyzed.

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