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An ultra-low-power wireless transmitter for embedded bionic systems is proposed, which achieves 40 pJ/b energy efficiency and delivers 500 kb/s data using the medical implant communication service frequency band (402-405 MHz). It consumes a measured peak power of 200 µW from a 1.2 V supply while occupying an active area of 0.0016 mm 2 in a 130 nm technology. A modified pulse position modulation technique called saturated amplified signal is proposed and implemented, which can reduce the overall and per bit transferred power consumption of the transmitter while reducing the complexity of the transmitter architectures, and hence potentially shrinking the size of the implemented circuitry. The design is capable of being fully integrated on single-chip solutions for surgically implanted bionic systems, wearable devices and neural embedded systems.

This article describes how, in recent years, with the development of microelectronics, implantable electronic devices have been playing a significant role in modem medicine. Examples of such electronic implant devices are, for instance, retinal prosthesis and brain implants. It brings great challenges in low power radio frequency (RF) and analog designs. This article presents a low power Gaussian frequency shift keying (GFSK) demodulator designed for Medical Implant Communications Service (MICS) band Receiver. This demodulator utilizes a novel structure that a wide IF range can be handled and presents the smallest Δf/f ratio in any published GFSK demodulators. In theory the demodulation method can be applied to any RF frequency. The demodulator draws 550uA from a 1 V power supply. A maximum data rate of 400 Kbits/s can be achieved within the 300 KHz channel bandwidth defined by MICS. A simulated signal-to-noise ratio (SNR) of 15.2dB at AWGN channel is obtained to achieve 10-3 bit error rate (BER). This demodulator is fabricated on 65-nm CMOS and occupies 0.12mm2 silicon area.

This article describes how, in recent years, with the development of microelectronics, implantable electronic devices have been playing a significant role in modem medicine. Examples of such electronic implant devices are, for instance, retinal prosthesis and brain implants. It brings great challenges in low power radio frequency (RF) and analog designs. This article presents a low power Gaussian frequency shift keying (GFSK) demodulator designed for Medical Implant Communications Service (MICS) band Receiver. This demodulator utilizes a novel structure that a wide IF range can be handled and presents the smallest Δf/f ratio in any published GFSK demodulators. In theory the demodulation method can be applied to any RF frequency. The demodulator draws 550uA from a 1 V power supply. A maximum data rate of 400 Kbits/s can be achieved within the 300 KHz channel bandwidth defined by MICS. A simulated signal-to-noise ratio (SNR) of 15.2dB at AWGN channel is obtained to achieve 10-3 bit error rate (BER). This demodulator is fabricated on 65-nm CMOS and occupies 0.12mm2 silicon area.