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State of problem. Today a significant part of passive microwave electronic devices is implemented in the form of single-layer structures. In some cases, such approach leads to an increase in the overall dimension’s characteristics of electronic equipment. Moreover, the application of single-layer microwave boards leads to the complexity of replacing individual functional units. Therefore, the replacement of the entire microwave board is required to improve any of its functional part. It is nonprofit economically and inefficient technologically. Significant progress in eliminating the above-mentioned disadvantages may be achieved by the application of volume-modular technology of design microwave electronic devices. Purpose. The purpose of the research is to present a brief overview of the features of the application of volume-modular technology in the design of microwave electronic devices of modern radio-electronic equipment. The volume-modular way of implementing microwave devices is described. It allows improving their weight and overall dimension characteristics and at the same time maintaining and increasing their functionality. The basic principles of design of volume modular microwave electronic devices are formulated. The results of numerical simulation of the electrodynamics characteristics of a strip-slot transition are presented. The method for quantitative assessment of the influence of volume-modular technology on the weight and dimensions characteristics of microwave electronic devices is considered. The main advantages and disadvantages of volume-modular technology are listed. Results. We demonstrate a possibility of reducing the overall dimensions characteristics of passive microwave electronic devices by more than 10 times while maintaining their electrical parameters. Each component is presented in the form of a structurally separate and complete board with unified overall and connecting dimensions. The standard electromagnetic coupling between functional parts makes it possible to assemble microwave electronic devices with specified electrodynamics characteristics from the base elements.

The main lines in the development of wireless communication technologies are their microminiaturization, expanding the functionality of their built-in devices, and fastening the data exchange between the components of radio engineering complexes. In this case, one of the relevant issues is the development of frequency-selective devices operating in the microwave frequency range. A promising line for the creation of such devices is their integrated design based on a volumetric strip-slot transition. This article presents theoretical and experimental research of the s-parameters of the volumetric strip-slot transition. The frequency-selective properties of the volumetric strip-slot transition were estimated based on the obtained dependences of the s-parameters. The theoretical results were obtained by creating a matrix mathematical model, by designing an equivalent circuit in a circuit-simulation program, and by the numerical simulation based on solving a boundary value problem in a strict diffraction statement, using direct numerical methods. The experimental results were obtained using a sample of the volumetric strip-slot transition. The presented results of the three types of simulation and the experimental results are in good numerical relation to each other.

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