The miniaturization of mid-infrared optical gas sensors has great potential to make the “fingerprint region” between 2 and 10 μm accessible to a variety of cost-sensitive applications ranging from medical technology to atmospheric sensing. Here we demonstrate a gas sensor concept that achieves a 30-fold reduction in absorption volume compared to conventional gas sensors by using plasmonic metamaterials as on-chip optical filters. Integrating metamaterials into both the emitter and the detector cascades their individual filter functions, yielding a narrowband spectral response tailored to the absorption band of interest, here CO2. Simultaneously, the metamaterials’ angle-independence is maintained, enabling an optically efficient, millimeter-scale cavity. With a CO2 sensitivity of 22.4 ± 0.5 ppm·Hz–0.5, the electrically driven prototype already performs at par with much larger commercial devices while consuming 80% less energy per measurement. The all-metamaterial sensing concept offers a path toward more compact and energy-efficient mid-infrared gas sensors without trade-offs in sensitivity or robustness.

A simple and thermally stable photonic heterostructure exhibiting high average reflectivity (⟨R⟩ ≈ 88.8%) across a broad wavelength range (920−1450 nm) is presented. The design combines a thin, highly reflective and broadband metallic substrate (Ta) with an optimized dielectric coating (10 layers) to create an enhanced reflector with improved optical and thermal properties compared to its constituents. The heterostructure exhibits temperature-reversible reflective properties up to 1000 °C. In order to take advantage of the high reflectivity and temperature stable properties of this coating, in a wide range of non-photonic composite materials, we have fabricated heterostructure platelets as additives. By impregnating these additives into other types of materials, their response can be photonically enhanced. Platelets of such a heterostructure have been introduced inside an organic matrix to increase its broadband reflection performance. The platelet-impregnated matrix displays an average reflectivity improvement from 5% to an average of 55% over a 1000 nm range, making it a suitable additive for next generation thermal protection systems (TPS).

A transparent Optical-subTHz-Optical link providing record-high single line rates of 240 Gbit/s and 192 Gbit/s on a single optical carrier over distances from 5 to 115 m is demonstrated. Besides a direct mapping of the optical to a 230 GHz subTHz-carrier frequency by means of a uni-traveling carrier (UTC) photodiode, we demonstrate direct conversion of data from the subTHz domain back to the optical domain by a plasmonic modulator. It is shown that the subTHz-to-optical upconversion can even be performed at good quality without any electrical amplifiers. Finally, at the receiver, the local oscillator is employed to directly map the optical signal back to the electrical baseband within a coherent receiver.

Photonic metasurfaces compatible with large-scale production such as CMOS are of importance because they promise cointegration of electronics with photonics for detection, communication and sensing. The main challenges on the way of designing such metasurfaces are: (1) large variety of possible geometrical shapes of metasurface elements that makes finding the most appropriate shape difficult; (2) poor compatibility of available electronic layer stacks with photonics. In this paper we show how to address both of these challenges utilizing extended equivalent-circuit analysis. In a first step we classify the behavior of different metasurfaces using the equivalent circuit. We discover that metasurfaces that use inverted-dipole resonator type exhibit higher tolerance to dielectric spacer thickness, higher angular stability and have similar resonance quality-factor as other types. In the second step we utilize the equivalent-circuit scheme to efficiently optimize the parameters of inverted-dipole based metasurfaces for a layer stack such as given in a CMOS process. Finally, as an example we demonstrate how an inverted-cross structure can be adapted to a commercial 110 nm CMOS process with Al metal layers. We measured peak absorption above 90% at center wavelength around 4 µm with quality factor of approximately 5 and angular stability larger than 60°.

Efficient and simple-to-fabricate light detectors in the mid infrared (MIR) spectral range are of great importance for various applications in existing and emerging technologies. Here, we demonstrate compact and efficient photodetectors operating at room temperature in a wavelength range of 2710–4250 nm with responsivities as high as 375 and 4 A/W. Key to the high performance is the combination of a sintered colloidal quantum dot (CQD) lead selenide (PbSe) and lead sulfide (PbS) heterojunction photoconductor with a metallic metasurface perfect absorber. The combination of this photoconductor stack with the metallic metasurface perfect absorber provides an overall ∼20-fold increase of the responsivity compared against reference sintered PbSe photoconductors. More precisely, the introduction of a PbSe/PbS heterojunction increases the responsivity by a factor of ∼2 and the metallic metasurface enhances the responsivity by an order of magnitude. The metasurface not only enhances the light–matter interaction but also acts as an electrode to the detector. Furthermore, fabrication of our devices relies on simple and inexpensive methods. This is in contrast to most of the currently available (state-of-the-art) MIR photodetectors that rely on rather expensive as well as nontrivial fabrication technologies that often require cooling for efficient operation.