A detailed description of the electronic properties, chemical state, and structure of uniform single and few-layered graphene oxide (GO) thin films at different stages of reduction is reported. The residual oxygen content and structure of GO are monitored and these chemical and structural characteristics are correlated to electronic properties of the thin films at various stages of reduction. It is found that the electrical characteristics of reduced GO do not approach those of intrinsic graphene obtained by mechanical cleaving because the material remains significantly oxidized. The residual oxygen forms sp3 bonds with carbon atoms in the basal plane such that the carbon sp2 bonding fraction in fully reduced GO is ca 0.80. The minority sp3 bonds disrupt the transport of carriers delocalized in the sp2 network, limiting the mobility, and conductivity of reduced GO thin films. Extrapolation of electrical conductivity data as a function of oxygen content reveals that complete removal of oxygen should lead to properties that are comparable to graphene

The synthesis of wafer-scale single crystal graphene remains a challenge toward the utilization of its intrinsic properties in electronics. Until now, the large-area chemical vapor deposition of graphene has yielded a polycrystalline material, where grain boundaries are detrimental to its electrical properties. Here, we study the physicochemical mechanisms underlying the nucleation and growth kinetics of graphene on copper, providing new insights necessary for the engineering synthesis of wafer-scale single crystals. Graphene arises from the crystallization of a supersaturated fraction of carbon-adatom species, and its nucleation density is the result of competition between the mobility of the carbon-adatom species and their desorption rate. As the energetics of these phenomena varies with temperature, the nucleation activation energies can span over a wide range (1-3 eV) leading to a rational prediction of the individual nuclei size and density distribution. The growth-limiting step was found to be the attachment of carbon-adatom species to the graphene edges, which was independent of the Cu crystalline orientation.

Ultrathin ordered titanium oxide films on Pt(111) surface are prepared by reactive evaporation of Ti in oxygen. By varying the Ti dose and the annealing conditions (i.e., temperature and oxygen pressure), six different long-range ordered phases are obtained. They are characterized by means of low-energy electron diffraction (LEED), X-ray photoemission spectroscopy (XPS), and scanning tunneling microscopy (STM). By careful optimization of the preparative parameters, we find conditions where predominantly single phases of TiO(x), revealing distinct LEED pattern and STM images, are produced. XPS binding energy and photoelectron diffraction (XPD) data indicate that all the phases, except one (the stoichiometric rect-TiO2), are one monolayer thick and composed of a Ti-O bilayer with interfacial Ti. Atomically resolved STM images confirm that these TiO(x) phases wet the Pt surface, in contrast to rect-TiO2. This indicates their interface stabilization. At a low Ti dose (0.4 monolayer equivalents, MLE), an incommensurate kagomé-like low-density phase (k-TiO(x) phase) is observed where hexagons are sharing their vertexes. At a higher Ti dose (0.8 MLE), two denser phases are found, both characterized by a zigzag motif (z- and z'-TiO(x) phases), but with distinct rectangular unit cells. Among them, z'-TiO(x), which is obtained by annealing in ultrahigh vacuum (UHV), shows a larger unit cell. When the postannealing of the 0.8 MLE deposit is carried out at high temperatures and high oxygen partial pressures, the incommensurate nonwetting, fully oxidized rect-TiO2 is found The symmetry and lattice dimensions are almost identical with rect-VO2, observed in the system VO(x)/Pd(111). At a higher coverage (1.2 MLE), two commensurate hexagonal phases are formed, namely the w- [(square root(43) x square root(43)) R 7.6 degrees] and w'-TiO(x) phase [(7 x 7) R 21.8 degrees]. They show wagon-wheel-like structures and have slightly different lattice dimensions. Larger Ti deposits produce TiO2 nanoclusters on top of the different monolayer films, as supported both by XPS and STM data. Besides the formation of TiO(x) surfaces phases, wormlike features are found on the bare parts of the substrate by STM. We suggest that these structures, probably multilayer disordered TiO2, represent growth precursors of the ordered phases. Our results on the different nanostructures are compared with literature data on similar systems, e.g., VO(x)/Pd(111), VO(x)/Rh(111), TiO(x)/Pd(111), TiO(x)/Pt(111), and TiO(x)/Ru(0001). Similar and distinct features are observed in the TiO(x)/Pt(111) case, which may be related to the different chemical natures of the overlayer and of the substrate.

Fluorine-doped titanium dioxide was prepared via sol−gel synthesis and subsequent calcination in air. The presence of fluorine in the lattice induces the formation of reduced Ti3+ centers that localize the extra electron needed for charge compensation and are observed by electron paramagnetic resonance. Density functional theory calculations using hybrid functionals are in full agreement with such description. The extra electron is highly localized in a 3d orbital of titanium and lies a few tenths of an electron volt below the bottom of the conduction band. The preparation via sol−gel synthesis using aqueous solutions of fluorides also causes the formation of surface F− ions that substitute surface hydroxyl groups (OH−) without generating reduced centers.