We report field-effect transistors (FETs) with single-crystal molybdenum disulfide (MoS 2 ) channels synthesized by chemical vapor deposition (CVD). For a bilayer MoS 2 FET, the mobility is ~17 cm 2 V −1 s −1 and the on/off current ratio is ~10 8 , which are much higher than those of FETs based on CVD polycrystalline MoS 2 films. By avoiding the detrimental effects of the grain boundaries and the contamination introduced by the transfer process, the quality of the CVD MoS 2 atomic layers deposited directly on SiO 2 is comparable to the best exfoliated MoS 2 flakes. It shows that CVD is a viable method to synthesize high quality MoS 2 atomic layers.

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In this research, a tiny size non-invasive pressure detection head is designed and fabricated. It serves as an essential component of the multi-functional sphygmus detection system. When the pressure detection head places upon the correct position at wrist, it transmits the pulse pressure from the touch membrance through the silicon oil, and then to the pressure die. This kind of structure will provide a stable data acquisition for pulse pressure sensing. To verify the performances of the pressure detection head, a pressure test bench together with standard testing procedure is developed to gather information on the tested signals. The test results indicate that the designed pressure detection head is feasible and can be used for sphygmic diagnosis in medicine.