A temperature sensor is manufactured and characterized using the evanescent field coupling between the fiber-to-planar waveguide coupler and prism. Bianthrone was used as a planar waveguide due to its thermochromic isomerization (stereoisomerism).The responses to heating of the wavelength and the attenuated total reflection (ATR) output power of these sensors are 1.6 nm/°C and 2.9 mW/°C, respectively.
Herein, we describe a new flexible atmospheric pressure plasma jet device composed of hollow-core optical fibers and introduce two potential applications of the device: endoscopic plasma treatment and decomposition of aqueous phosphorus compounds. The proposed device is 1.6 m long and highly flexible, has a small probe size of several hundred micrometers, and spatially separates the plasma jet from the electrical input, making it very suitable for treatment through the biopsy channel of a conventional endoscope. Because the wire electrode of the fabricated atmospheric pressure plasma jet device is thoroughly isolated inside the hollow of the optical fiber, the device produces a plasma column in an identical discharge state regardless of external environmental conditions. As a result, the device can operate safely and steadily in highly humid environments, such as underwater, which can be utilized to decompose phosphorus compounds in fresh water.
We propose and demonstrate the UV sensor based on micro-optic Mach-Zehnder interferometer composed of two single mode fiber-pigtailed collimators and a polymer film with photochromic dye. Spirooxazine is used as a UV sensing material which is dispersed in polystyrene and coated on the glass substrate by spin coating method. The extinction ratio and the spectral position of minimum transmission wavelength of fabricated UV sensor can be controlled to be more than 28 dB and 50 nm, independently. The experiment was conducted to measure the wavelength shift of spectral response with UV radiation using the spirooxazine concentration in polystyrene 1.0 wt% and 1.5 wt%. Fabricated UV sensors have a sensitivity of 0.162 nm/mW and 0.316 nm/A.U respectively.I.
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