Passive daytime radiative cooling, which is a process that removes excess heat to cold space as an infinite heat sink, is an emerging technology for applications that require thermal control. Among the different structures of radiative coolers, multilayerand photonic-structured radiative coolers that are composed of inorganic layers still need to be simple to fabricate. Herein, we describe the fabrication of a nanoparticle-mixture-based radiative cooler that exhibits highly selective infrared emission and low solar absorption. Al 2 O 3 , SiO 2 , and Si 3 N 4 nanoparticles exhibit intrinsic absorption in parts of the atmospheric transparency window; facile one-step spin coating of a mixture of these nanoparticles generates a surface with selective infrared emission, which can provide a more powerful cooling effect compared to broadband emitters. The nanoparticle-based radiative cooler exhibits an extremely low solar absorption of 4% and a highly selective emissivity of 88.7% within the atmospheric transparency window owing to the synergy of the optical properties of the material. The nanoparticle mixture radiative cooler produces subambient cooling of 2.8 °C for surface cooling and 1.0 °C for space cooling, whereas the Ag film exhibits an above-ambient cooling of 1.1 °C for surface cooling and 3.4 °C for space cooling under direct sunlight.

Thermoelectrics operating at high temperature can cost-effectively convert waste heat and compete with other zero-carbon technologies. Among different high-temperature thermoelectrics materials, silicon nanowires possess the combined attributes of cost effectiveness and mature manufacturing infrastructures. Despite significant breakthroughs in silicon nanowires based thermoelectrics for waste heat conversion, the figure of merit (ZT) or operating temperature has remained low. Here, we report the synthesis of large-area, wafer-scale arrays of porous silicon nanowires with ultra-thin Si crystallite size of ~4 nm. Concurrent measurements of thermal conductivity (κ), electrical conductivity (σ), and Seebeck coefficient (S) on the same nanowire show a ZT of 0.71 at 700 K, which is more than ~18 times higher than bulk Si. This ZT value is more than two times higher than any nanostructured Si-based thermoelectrics reported in the literature at 700 K. Experimental data and theoretical modeling demonstrate that this work has the potential to achieve a ZT of ~1 at 1000 K.

ZnO-based hierarchical structures including nanoparticles (NPs), nanorods (NRs), and nanoflowers (NFs) on 3D-printed backbones were effectively fabricated via the combination of FDM 3D-printing technique and hydrothermal reaction.

Bismuth vanadate (BiVO4) is a promising photoanode material; however, its efficiency significantly changes depending on the atomic ratio of Bi/V, and there is no suitable method for synthesizing large-area photoanodes. In this study, an efficient BiVO4 photoanode was fabricated via sputtering, by manipulating the molar ratio of Bi/V with V solution annealing. V solution annealing not only adjusted the atomic ratio of Bi/V but also increased the number of O vacancies, thereby improving the charge-separation and charge-transport efficiencies. Consequently, the photocurrent density of the sputtered photoanode with V solution annealing (BVO-V) was 1.86 mA/cm2, which is 23 times higher than that of the sputtered photoanode annealed under air conditions (BVO-A, 81.0 μA/cm2). Furthermore, microcone-patterned fluorine-doped SnO2 was fabricated to increase the active area and reduce the high reflectance, owing to the dense deposition because of the sputtering. Thus, the photocurrent density of the MC-BVO was 3.11 mA/cm2, which is approximately 67% higher than that of BVO-V (1.86 mA/cm2).

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