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Vertical ZnO/CuO axial nanowire (NW) arrays were fabricated by using GLAD (glancing angle deposition) technique inside the RF magnetron sputtering system. A post annealing treatment of vertical ZnO/CuO axial NWs was performed in air from 200 C to 900 C temperature. FE-SEM (field emission scanning electron microscope) imaging shows vertically well aligned NW structure. X-ray diffraction analysis showed improvement in crystalline structure, with increasing annealing with 400 C sample showing the minimum dislocation density. The annealed sample at 400 C (in air) shows high photoresponse as compared to other samples signifying reduction in defect states as also observed from PL analysis. The 400 C sample showed the highest photocapacitance owing to the improvement in the interface. Moreover, the annealed vertical ZnO/CuO axial NW arrays at 400 C showed a large responsivity (R) of 2.52 A/W, specific detectivity (D*) of 5.14 x 1011Jones and noise equivalent power (NEP) as low as 6.54 pW at +4V respectively. Furthermore, the annealed 400 C device showed fast response with equal rise and fall time of 0.02 ms at +4 V.

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