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Two dimensional InGaAs/InP pin photodiode array on semiinsulating InP has been developed for the image sensing of the eye safe LASER RADAR in the 1.55 gm wavelength range of the spectrum with high bandwidth and large area. The fabrication and dark current characteristics are discussed. Dark current characteristic is limited by the diffusion and generationrecombination in the 2 dimensional InGaAs/InP photodiode arrays on semi-insulating InP The static dark current of the InGaAs/InP PiN photodiode arrays increases as proportional to the number ofthe pixels in the array.