GaAsN was grown by molecular beam epitaxy equipped with a radio frequency nitrogen plasma source. The N incorporation behaviors were investigated using a series of samples grown at different growth rates, As4/Ga ratios, and nitrogen fluxes within a growth temperature range from 420 to 560 °C. It was found that, for the GaAsN grown at higher growth rates (0.4–1.3 ML/s), the N concentration increased linearly following a decrease in growth rate, and kept independent of the arsenic pressure. For the GaAsN grown at lower growth rate (0.1–0.3 ML/s), the N concentration was significantly influenced by the arsenic pressure, and the increase in N concentration with decreasing growth rate follows a sublinear manner. We propose a model based on the incorporation competition of group V elements (N and As) under N underpressure and overpressure conditions, which can explain the different behaviors well.
Self-assembled In0.9Ga0.1As, In0.9Al0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy electron diffraction. Experimental results reveal clear differences in QD formation, size distribution, and luminescence between the InAs and In0.9(Ga/Al)0.1As samples, which show the potential of introducing ternary compositions to adjust the structural and optical properties of QDs on an InP substrate.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.